Ting-Huang Kuo

Title: Innovations of Ting-Huang Kuo

Introduction

Ting-Huang Kuo is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on advanced transistor designs that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor device featuring both a planar transistor and a FinFET. This innovative device includes a FinFET on one region of a substrate and a planar-FET on another region. The FinFET consists of a source region, a drain region, and a gate, while the planar-FET has similar components. Notably, the bottommost position of the FinFET source region is lower than that of the planar-FET source region. Another significant patent involves a FinFET device structure and the method for its formation. This structure includes multiple fin structures over a substrate, with specific sidewall surfaces extending in different directions. The design also incorporates isolation structures that surround the fin structures, optimizing the device's performance.

Career Highlights

Ting-Huang Kuo is associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading player in the semiconductor industry. His work has been instrumental in advancing semiconductor technologies, particularly in the development of FinFET devices.

Collaborations

He has collaborated with notable colleagues such as Wei-Barn Chen and Chi-Cherng Jeng, contributing to various innovative projects within the semiconductor field.

Conclusion

Ting-Huang Kuo's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.