The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 26, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ting-Huang Kuo, Tainan, TW;
Chia-Pin Lo, Tainan, TW;
Wei-Barn Chen, Tainan, TW;
Chen-Chieh Chiang, Kaohsiung, TW;
Chii-Ming Wu, Taipei, TW;
Chi-Cherng Jeng, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Semiconductor devices and manufacturing method of the same are disclosed. A semiconductor device includes a substrate, a p-type MOS transistor, an n-type MOS transistor and a cured flowable oxide layer. The substrate includes a first region and a second region. The p-type MOS transistor is in the first region. The n-type MOS transistor is in the second region. The cured flowable oxide layer covers the p-type MOS transistor and the n-type MOS transistor, wherein a first strain of the cured flowable oxide layer applying to the p-type MOS transistor is different from a second strain of the cured flowable oxide layer applying to the n-type MOS transistor, and the difference therebetween is greater than 0.002 Gpa.