The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Aug. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Barn Chen, Tainan, TW;
Ting-Huang Kuo, Tainan, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chi-Cherng Jeng, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A FinFET device structure and method for forming the same are provided. The method includes forming a plurality of fin structures over a substrate, and the substrate includes a first region and a second region. The method includes forming a plurality of isolation structures surrounding the fin structures, and a top surface of each of the isolation structures is lower than a top surface of each of the fin structures, and the isolation structures include first isolation structures over the first region and second isolation structures over the second region. The method includes forming a mask layer on the first isolation structures to expose the second isolation structures and removing a portion of the second isolation structures, such that a top surface of each of the second isolation structures is lower than a top surface of each of the first isolation structures.