The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Apr. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Barn Chen, Tainan, TW;
Ting-Huang Kuo, Tainan, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chi-Cherng Jeng, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first, second, third and fourth fin structures over a substrate. The first and the second fin structures have a first and a second sidewall surfaces respectively. The third and the fourth fin structure have a third and a fourth sidewall surfaces respectively. The first and the second sidewall surfaces extend along a first direction. The third and the fourth sidewall surfaces extend along a second direction different from the first direction. A first and a second isolation structures are over the substrate and surrounding the first and the second fin structure and surrounding the third and the fourth fin structures respectively. A distance between top portions of the third and the fourth sidewall surfaces is greater than that between top portions of the first and the second sidewall surfaces.