The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

May. 07, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ting-Chun Kuan, Taichung, TW;

I-Chih Chen, Tainan, TW;

Chih-Mu Huang, Tainan, TW;

Fu-Tsun Tsai, Tainan, TW;

Sheng-Lin Hsieh, New Taipei, TW;

Kuan-Jung Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0214 (2013.01); H01L 21/76831 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.


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