Tainan, Taiwan

Fu-Tsun Tsai

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Tsun Tsai. Retrieved from https://idiyas.com/inventor/fu-tsun-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 73.9

Average Co-Inventor Count = 5.3

ph-index = 4

Forward Citations = 50(Granted Patents)


Location History:

  • Taipei, TW (2017)
  • Tainan, TW (2015 - 2022)

Company Filing History:


Years Active: 2015-2024

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Areas of Expertise:
Semiconductor Device
FinFET
Epitaxial Control
Image Sensor
Barrier Layer
Pad Structure
Dual STI Structure
Backside Illumination
Metal Layout
Wafer Structure
Impurity Diffusion
Deep Trench Isolation
23 patents (USPTO):Explore Patents

Title: **Fu-Tsun Tsai: Innovator in Semiconductor Technology**

Introduction

Fu-Tsun Tsai is a prominent inventor based in Tainan, Taiwan. With an impressive record of 23 patents, Tsai has made significant contributions to the field of semiconductor technology. His work has not only advanced the industry but also exemplifies the importance of innovation in modern electronics.

Latest Patents

Among his latest patents is a semiconductor device and a method of manufacturing the same. This patent describes a semiconductor device featuring first and second fin structures, arranged to extend parallel to an axis. Key components include a first gate feature that overlays the first fin structure and a second gate feature that overlays the second fin structure. The design incorporates a first spacer and a second spacer, enhancing the device's functionality and efficiency.

Another notable patent focuses on the method of semiconductor device fabrication with improved epitaxial source/drain proximity control. This invention presents a schematic that includes various structural features such as a substrate, fins, and gate structures essential for advanced semiconductor manufacturing. The depth of epitaxial features embedded within the fins is optimized for performance, marking a significant advancement in the fabrication process.

Career Highlights

Fu-Tsun Tsai is currently affiliated with Taiwan Semiconductor Manufacturing Company Limited, one of the largest semiconductor manufacturers in the world. His work at TSMC has been pivotal in shaping innovations in semiconductor technology, leading to the development of more efficient and advanced electronic devices.

Collaborations

Throughout his career, Tsai has collaborated with distinguished coworkers such as I-Chih Chen and Chi-Cherng Jeng. These partnerships have fostered a creative environment for innovation, leading to the generation of multiple patents that benefit the semiconductor industry.

Conclusion

Fu-Tsun Tsai stands out as a key figure in semiconductor invention and innovation. His extensive portfolio of patents underscores his commitment to advancement in the field, making him a valuable asset to Taiwan Semiconductor Manufacturing Company Limited and the broader technology community. Tsai’s achievements are a testament to the impactful role of inventors in driving progress within the semiconductor landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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