The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Apr. 07, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Taipei, TW;
I-Chih Chen, Taipei, TW;
Chih-Mu Huang, Taipei, TW;
Fu-Tsun Tsai, Taipei, TW;
Meng-Yi Wu, Taipei, TW;
Yung-Fa Lee, Taipei, TW;
Ying-Lang Wang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Taipei, TW;
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.