The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Sep. 09, 2016
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
I-Chih Chen, Tainan, TW;
Chih-Ming Hsieh, Changhua County, TW;
Fu-Tsun Tsai, Tainan, TW;
Yung-Fa Lee, Tainan, TW;
Chih-Mu Huang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes receiving a FinFET precursor including a fin structure formed between some isolation regions, and a gate structure formed over a portion of the fin structure; removing a top portion of the fin structure on either side of the gate structure; growing a semiconductive layer on top of a remaining portion of the fin structure such that a plurality of corners is formed over the fin structure; forming a capping layer over the semiconductive layer; performing an annealing process on the FinFET precursor to form a plurality of dislocations proximate to the corners; and removing the capping layer.