The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Mar. 23, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Fu-Tsun Tsai, Tainan, TW;
Tong Jun Huang, Hsinchu, TW;
I-Chih Chen, Tainan, TW;
Chi-Cherng Jeng, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method is performed to a structure that includes a substrate with first and second regions for logic and RF devices respectively, first fin and first gate structure over the first region, second fin and second gate structure over the second region, and gate spacers over sidewalls of the gate structures. The method includes performing a first etching to the first fin to form a first recess; and performing a second etching to the second fin to form a second recess. The first and second etching are tuned to differ in at least one parameter such that the first recess is shallower than the second recess and a first distance between the first recess and the first gate structure along the first fin lengthwise is smaller than a second distance between the second recess and the second gate structure along the second fin lengthwise.