The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jul. 06, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen-Chun Chen, Tainan, TW;

Chiu-Jung Chen, Tainan, TW;

Fu-Tsun Tsai, Tainan, TW;

Shiu-Ko Jangjian, Tainan, TW;

Chi-Cherng Jeng, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 27/146 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/02019 (2013.01); H01L 21/0273 (2013.01); H01L 21/268 (2013.01); H01L 21/30604 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14687 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/838 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/83805 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/07025 (2013.01);
Abstract

A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.


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