The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Nov. 11, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chen An Hsu, Hsinchu, TW;
Chien-Wei Lee, Hsinchu, TW;
Anhao Cheng, Hsinchu, TW;
Yen-Liang Lin, Hsinchu, TW;
Ru-Shang Hsiao, Hsinchu, TW;
Wei-Lun Chung, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate and a first epitaxial source/drain feature extending into the semiconductor layer. The semiconductor structure includes a first doped region located in the semiconductor layer below the first epitaxial source/drain feature. The first doped region includes a dopant at a first concentration. The semiconductor structure includes a second epitaxial source/drain feature extending into the semiconductor layer. The semiconductor structure includes a second doped region located in the semiconductor layer below the second epitaxial source/drain feature. The second doped region includes the dopant at a second concentration that is less than the first concentration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile