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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12660285 B1

PDFFull Text
Date of Patent:
Jun. 16, 2026

Filed:

Aug. 09, 2023

Structure for metal gate electrode and method of fabrication

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ru-Shang Hsiao, Jhubei City, TW;

Ching-Hwanq Su, Tainan City, TW;

Pohan Kung, Hsinchu, TW;

Ying Hsin Lu, Hsinchu, TW;

I-Shan Huang, Tainan City, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H10D 64/27 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 64/517 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H10D 64/518 (2025.01); H10D 64/666 (2025.01);
Abstract

A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.

Find Patent Forward Citations

Hsiao, Ru-Shang. (2026). Structure for metal gate electrode and method of fabrication (U.S. Patent No. 12660285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660285

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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