I-Shan Huang

This inventor holds 19 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: I-Shan Huang. Retrieved from https://idiyas.com/inventor/i-shan-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 19 (Patent Applications = 6)

% Patents Active = 100.0

Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 10(Granted Patents)

Location History:

Hsinchu, TW (2023)
Tainan, TW (2017 - 2024)

Company Filing History:

19 out of 43,653

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2017-2026

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Areas of Expertise:

Transistor Arrays

Semiconductor Structures

Metal Gate Structures

Field-Effect Transistors

Resistor

Capacitor

Trimmed-Gates

Gate-End Structure

FinFETs

Device Engineering

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12660285 - Structure for metal gate electrode and method of fabrication (2026-06-16),

2. 12563986 - Methods for fabricating semiconductor structures having transistor arrays with different pitches (2026-02-24),

3. 12507429 - Metal gate structures and methods of fabricating the same in field-effect transistors (2025-12-23),

4. 12506068 - Semiconductor structure with resistor and capacitor (2025-12-23),

5. 12423498 - Semiconductor device (2025-09-23),

6. 12289877 - Semiconductor device including unilaterally extending gates and method of forming same (2025-04-29),

7. 11961891 - Structure for metal gate electrode and method of fabrication (2024-04-16),

8. 11949000 - Metal gate structures and methods of fabricating the same in field-effect transistors (2024-04-02),

9. 11844205 - Semiconductor device including trimmed-gates and method of forming same (2023-12-12),

10. 11763061 - Method of making semiconductor device and semiconductor device (2023-09-19),

11. 11587937 - Method of forming semiconductor device including trimmed-gates (2023-02-21),

12. 11476351 - Metal gate structures and methods of fabricating the same in field-effect transistors (2022-10-18),

13. 11443093 - Semiconductor device (2022-09-13),

14. 11282934 - Structure for metal gate electrode and method of fabrication (2022-03-22),

15. 11037935 - Semiconductor device including trimmed-gates (2021-06-15),

Title: Inventor I-Shan Huang: Revolutionizing Technology in Tainan

Introduction: I-Shan Huang is a visionary inventor based in Tainan, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Huang's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar-powered devices that are efficient and sustainable.

Career Highlights: With a career spanning over two decades, Huang has worked tirelessly to innovate and create solutions that address pressing global challenges. His work has been recognized with numerous awards and accolades in the tech industry.

Collaborations: Huang has collaborated with leading research institutions and universities worldwide to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of technological innovation.

Conclusion: In conclusion, I-Shan Huang's dedication to technological advancement and sustainable solutions has solidified his position as a pioneering inventor in Tainan and beyond. His work continues to inspire future generations of innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

6 patents pending: