The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Jen Chen, Hsinchu, TW;

Ling-Sung Wang, Hsinchu, TW;

I-Shan Huang, Hsinchu, TW;

Chan-Yu Hung, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 21/28 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01); G03F 1/30 (2012.01); G03F 1/32 (2012.01); G03F 7/20 (2006.01); G06F 111/20 (2020.01); G06F 119/18 (2020.01); H01L 21/027 (2006.01); H10B 10/00 (2023.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/36 (2013.01); G03F 1/70 (2013.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 21/28123 (2013.01); H10D 64/519 (2025.01); H10D 84/834 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01); G03F 1/30 (2013.01); G03F 1/32 (2013.01); G03F 7/2002 (2013.01); G03F 7/2037 (2013.01); G06F 2111/20 (2020.01); G06F 2119/18 (2020.01); H01L 21/0274 (2013.01); H10B 10/12 (2023.02); H10D 84/0135 (2025.01); H10D 84/0158 (2025.01); H10D 84/0172 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor structure includes first and second active regions extending in a first direction. The semiconductor structure further includes gate electrodes extending in a second direction perpendicular to the first direction. Each of the gate electrodes includes a first segment over at least one of the first active region or the second active region; a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.


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