The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Nov. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Jen Chen, Hsinchu, TW;

Wen-Hsi Lee, Hsinchu, TW;

Ling-Sung Wang, Hsinchu, TW;

I-Shan Huang, Hsinchu, TW;

Chan-yu Hung, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 7/50 (2005.12); G06F 30/39 (2019.12); H01L 23/528 (2005.12); H01L 27/088 (2005.12); H10B 10/00 (2022.12); H01L 29/423 (2005.12); H01L 29/78 (2005.12);
U.S. Cl.
CPC ...
H10B 10/12 (2023.01); G06F 30/39 (2019.12); H01L 23/528 (2012.12); H01L 27/0886 (2012.12); H01L 29/42376 (2012.12); H01L 29/4238 (2012.12); H01L 29/785 (2012.12);
Abstract

A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.


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