Wen-Hsi Lee

USPTO Granted Patents = 22 (Patent Applications = 2)

Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 76(Granted Patents)

Location History:

Tainan, TW (2017 - 2023)
Hsinchu, TW (2023)
Kaohsiung, TW (2000 - 2024)

Company Filing History:

9 out of 40,635

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

8 out of 618

National Cheng-kung University

Industrial Technology Research Institute

patents

5. 1 out of 21,361

Koninklijke Philips Corporation N.v.

patents

6. 1 out of 14,087

U.S. Philips Corporation

patents

where one patent can have more than one assignee

Years Active: 2000-2025

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22 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12464790 - Semiconductor structure (2025-11-04),

2. 12289877 - Semiconductor device including unilaterally extending gates and method of forming same (2025-04-29),

3. 12021117 - Semiconductor structure and method of forming the same (2024-06-25),

4. 11844205 - Semiconductor device including trimmed-gates and method of forming same (2023-12-12),

5. 11810720 - Method for fabricating terminal electrode of multilayer ceramic capacitor having inner electrodes printed on full area together with protective layers (2023-11-07),

6. 11587937 - Method of forming semiconductor device including trimmed-gates (2023-02-21),

7. 11037935 - Semiconductor device including trimmed-gates (2021-06-15),

8. 10840330 - Block layer in the metal gate of MOS devices (2020-11-17),

9. 10373962 - Semiconductor device including trimmed-gates and method for generating layout of same (2019-08-06),

10. 10290403 - Methods of fabricating chip resistors using aluminum terminal electrodes (2019-05-14),

11. 10259172 - Fabrication method of magnetic device (2019-04-16),

12. 10174210 - Method of fabricating high-conductivity thick-film aluminum paste (2019-01-08),

13. 9928947 - Method of fabricating highly conductive low-ohmic chip resistor having electrodes of base metal or base-metal alloy (2018-03-27),

14. 9735231 - Block layer in the metal gate of MOS devices (2017-08-15),

15. 9552908 - Chip resistor device having terminal electrodes (2017-01-24),

Title: The Innovative Journey of Wen-Hsi Lee

Introduction: Wen-Hsi Lee, a pioneering inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the world of technology and innovation.

Latest Patents: Lee's latest patents showcase her dedication to pushing the boundaries of technology, with a focus on advancements in renewable energy solutions and sustainable materials.

Career Highlights: Throughout her illustrious career, Wen-Hsi Lee has been recognized for her groundbreaking work in the fields of clean energy, biodegradable materials, and smart technology. Her innovative spirit has led to the development of cutting-edge solutions that have the potential to revolutionize industries around the globe.

Collaborations: Lee has collaborated with leading research institutions, universities, and tech companies to further her research and bring her inventions to life. Her ability to work across disciplines and borders has resulted in the creation of impactful technologies with far-reaching implications.

Conclusion: Wen-Hsi Lee's passion for innovation and her relentless drive to create a better world through technology make her a true trailblazer in the field of inventing. Her work continues to inspire and shape the future of innovation, leaving a lasting legacy for generations to come.

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2 patents pending:

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