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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Wen-Hsi Lee

This inventor holds 22 USPTO granted patents and 7 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Cheng-Kung University, Yageo Corporation. Active years: 2000-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Hsi Lee. Retrieved from https://idiyas.com/inventor/wen-hsi-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 63.6


Average Co-Inventor Count = 2.3

ph-index = 4

Forward Citations = 79(Granted Patents)


Location History:

  • Tainan, TW (2017 - 2023)
  • Hsinchu, TW (2023)
  • Kaohsiung, TW (2000 - 2024)

Company Filing History:

goldMedal9 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal8 out of 658 
 
National Cheng-Kung University
 patents
bronzeMedal3 out of 33 
 
Yageo Corporation
 patents
4. 2 out of 9,308 
 
Industrial Technology Research Institute
 patents
5. 1 out of 21,910 
 
Koninklijke Philips Corporation N.v.
 patents
6. 1 out of 14,087 
 
U.S. Philips Corporation
 patents
where one patent can have more than one assignee

Years Active: 2000-2025

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Areas of Expertise:
Semiconductor Structure
Trimmed-Gates
Capacitor Design
Multilayer Ceramic
High-Conductivity
Chip Resistor
MOS Devices
Dielectric Material
Fabrication Method
Electronic Devices
Hybrid High-K Dielectric
Aluminum Terminal Electrodes
22 patents (USPTO):Explore Patents
1. 12464790 - Semiconductor structure (2025-11-04),
2. 12289877 - Semiconductor device including unilaterally extending gates and method of forming same (2025-04-29),
3. 12021117 - Semiconductor structure and method of forming the same (2024-06-25),
4. 11844205 - Semiconductor device including trimmed-gates and method of forming same (2023-12-12),
5. 11810720 - Method for fabricating terminal electrode of multilayer ceramic capacitor having inner electrodes printed on full area together with protective layers (2023-11-07),
6. 11587937 - Method of forming semiconductor device including trimmed-gates (2023-02-21),
7. 11037935 - Semiconductor device including trimmed-gates (2021-06-15),
8. 10840330 - Block layer in the metal gate of MOS devices (2020-11-17),
9. 10373962 - Semiconductor device including trimmed-gates and method for generating layout of same (2019-08-06),
10. 10290403 - Methods of fabricating chip resistors using aluminum terminal electrodes (2019-05-14),
11. 10259172 - Fabrication method of magnetic device (2019-04-16),
12. 10174210 - Method of fabricating high-conductivity thick-film aluminum paste (2019-01-08),
13. 9928947 - Method of fabricating highly conductive low-ohmic chip resistor having electrodes of base metal or base-metal alloy (2018-03-27),
14. 9735231 - Block layer in the metal gate of MOS devices (2017-08-15),
15. 9552908 - Chip resistor device having terminal electrodes (2017-01-24),

Title: The Innovative Journey of Wen-Hsi Lee

Introduction: Wen-Hsi Lee, a pioneering inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the world of technology and innovation.

Latest Patents: Lee's latest patents showcase her dedication to pushing the boundaries of technology, with a focus on advancements in renewable energy solutions and sustainable materials.

Career Highlights: Throughout her illustrious career, Wen-Hsi Lee has been recognized for her groundbreaking work in the fields of clean energy, biodegradable materials, and smart technology. Her innovative spirit has led to the development of cutting-edge solutions that have the potential to revolutionize industries around the globe.

Collaborations: Lee has collaborated with leading research institutions, universities, and tech companies to further her research and bring her inventions to life. Her ability to work across disciplines and borders has resulted in the creation of impactful technologies with far-reaching implications.

Conclusion: Wen-Hsi Lee's passion for innovation and her relentless drive to create a better world through technology make her a true trailblazer in the field of inventing. Her work continues to inspire and shape the future of innovation, leaving a lasting legacy for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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