logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12021117 B1

PDFFull Text
Date of Patent:
Jun. 25, 2024

Filed:

Jan. 13, 2022

Semiconductor structure and method of forming the same

Applicants:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

National Cheng Kung University, Tainan, TW;

Inventors:

Te-Ming Kung, Taichung, TW;

Ying-Lang Wang, Tai-Chung County, TW;

Kei-Wei Chen, Tainan, TW;

Wen-Hsi Lee, Kaohsiung, TW;

Shu Wei Chang, Kaohsiung, TW;

Assignees:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.;

NATIONAL CHENG KUNG UNIVERSITY;

Attorneys:

WPAT LAW

Anthony King

Primary Examiner:

Farun Lu

Assistant Examiner:

Sandra Milena Rodriguez Villanueva

Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02381 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 21/823412 (2013.01); H01L 29/42392 (2013.01);
Abstract

A method of forming a semiconductor structure includes following operations. A substrate including a silicon (Si) layer is received. An amorphous germanium (Ge) layer is formed on the Si layer. A barrier layer is formed over the amorphous Ge layer. The substrate is annealed to transform the Si layer and the Ge layer to form a single crystalline SiGe layer. A Ge concentration is in a positive correlation with a ratio of a thickness of the Ge layer and a thickness of the Si layer.

Find Patent Forward Citations

Quick Actions:

Kung, Te-Ming. (2024). Semiconductor structure and method of forming the same (U.S. Patent No. 12021117). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12021117

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…