The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jan. 13, 2022
Applicants:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
National Cheng Kung University, Tainan, TW;
Inventors:
Te-Ming Kung, Taichung, TW;
Ying-Lang Wang, Tai-Chung County, TW;
Kei-Wei Chen, Tainan, TW;
Wen-Hsi Lee, Kaohsiung, TW;
Shu Wei Chang, Kaohsiung, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02381 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 21/823412 (2013.01); H01L 29/42392 (2013.01);
Abstract
A method of forming a semiconductor structure includes following operations. A substrate including a silicon (Si) layer is received. An amorphous germanium (Ge) layer is formed on the Si layer. A barrier layer is formed over the amorphous Ge layer. The substrate is annealed to transform the Si layer and the Ge layer to form a single crystalline SiGe layer. A Ge concentration is in a positive correlation with a ratio of a thickness of the Ge layer and a thickness of the Si layer.