The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Jul. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;
Inventors:
Cheng-You Tai, Taipei, TW;
Sung-Hsin Yang, Tainan, TW;
Tsung Jing Wu, Yunlin, TW;
Jung-Chi Jeng, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Ru-Shang Hsiao, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/66 (2025.01); H01L 21/265 (2006.01); H10D 1/00 (2025.01);
U.S. Cl.
CPC ...
H10D 1/66 (2025.01); H01L 21/26513 (2013.01); H10D 1/047 (2025.01);
Abstract
Semiconductor devices having increased capacitance without increased fin height or increased chip area are disclosed. Grooves are formed across a width of the fin(s) to increase the overlapping surface area with the gate terminal, in particular with a length of the groove being less than or equal to the fin width. Methods of forming such grooved fins and semiconductor capacitor devices are also described.