Hsinchu, Taiwan

Sung-Hsin Yang

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Tainan, TW (2022)
  • Hsinchu, TW (2022 - 2023)

Company Filing History:


Years Active: 2022-2025

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14 patents (USPTO):

Title: Innovations of Sung-Hsin Yang

Introduction

Sung-Hsin Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents involves semiconductor devices and methods for increased capacitance. These devices achieve increased capacitance without the need for higher fin height or larger chip area. The innovation includes the formation of grooves across the width of the fins, which increases the overlapping surface area with the gate terminal. The length of the groove is designed to be less than or equal to the fin width. This method not only improves device performance but also offers a novel approach to semiconductor capacitor devices.

Career Highlights

Sung-Hsin Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

He has collaborated with notable colleagues such as Ru-Shang Hsiao and Jung-Chi Jeng, contributing to various projects that push the boundaries of semiconductor innovation.

Conclusion

Sung-Hsin Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

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