The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Apr. 14, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Sung-Hsin Yang, Hsinchu, TW;

Jung-Chi Jeng, Tainan, TW;

Ru-Shang Hsiao, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/7816 (2013.01); H01L 29/7851 (2013.01);
Abstract

In an embodiment, a device includes: an isolation region on a substrate; a fin structure protruding from between adjacent portions of the isolation region, the fin structure including a plurality of fins and a mesa, a channel region of the fin structure having a first portion in the fins and having a second portion in the mesa, the fins and the mesa being a continuous semiconductor material, the mesa having a greater width than the fins; and a first gate structure on the fin structure, the first gate structure extending along the first portion of the channel region in the fins and extending along the second portion of the channel region in the mesa.


Find Patent Forward Citations

Loading…