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For the Inventor, By the Inventor

San Jose, CA, United States of America

Kuk-Hwan Kim

This inventor holds 62 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Magnetic Tunnel Junctions (CPC class H01L). Top assignees: Spin Memory, Inc., Crossbar, Inc., Integrated Silicon Solution, (Cayman) Inc.. Active years: 2011-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuk-Hwan Kim. Retrieved from https://idiyas.com/inventor/kuk-hwan-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 62 

% Patents Active = 96.8

 

Average Co-Inventor Count = 3.5

ph-index = 7

Forward Citations = 429(Granted Patents)

Forward Citations (Not Self Cited) = 382(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Ann Arbor, MI (US) (2011 - 2016)
  • Santa Clara, CA (US) (2016)
  • Fremont, CA (US) (2019 - 2023)
  • Milpitas, CA (US) (2023)
  • San Jose, CA (US) (2013 - 2024)

Company Filing History:

goldMedal33 out of 146 
 
Spin Memory, Inc.
 patents
silverMedal12 out of 258 
 
Crossbar, Inc.
 patents
bronzeMedal7 out of 54 
 
Integrated Silicon Solution, (Cayman) Inc.
 patents
4. 5 out of 24 
 
Spin Transfer Technologies, Inc.
 patents
5. 5 out of 3,556 
 
University of Michigan
 patents

Years Active: 2011-2024

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Areas of Expertise:
Perpendicular Magnetic Tunnel Junction
Magnetic Random Access Memory
Power Optimization
Thin Film Transistors
Error Cache Systems
Heuristics
Silicide Structures
Voltage Controlled Magnetic Anisotropy
Dual Threshold Voltage Devices
Memory Systems
Flexible Substrates
Fabrication Methods
62 patents (USPTO):Explore Patents
1. 12069964 - Three dimensional perpendicular magnetic tunnel junction with thin film transistor array (2024-08-20),
2. 11631807 - Patterned silicide structures and methods of manufacture (2023-04-18),
3. 11586553 - Error cache system with coarse and fine segments for power optimization (2023-02-21),
4. 11580014 - Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments (2023-02-14),
5. 11417829 - Three dimensional perpendicular magnetic tunnel junction with thin film transistor array (2022-08-16),
6. 11342498 - High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transfer (2022-05-24),
7. 11222970 - Perpendicular magnetic tunnel junction memory cells having vertical channels (2022-01-11),
8. 11119936 - Error cache system with coarse and fine segments for power optimization (2021-09-14),
9. 11119910 - Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments (2021-09-14),
10. 11107979 - Patterned silicide structures and methods of manufacture (2021-08-31),
11. 10971681 - Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chip (2021-04-06),
12. 10930703 - High density MRAM integration (2021-02-23),
13. 10916582 - Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ) (2021-02-09),
14. 10854260 - Adjustable current selectors (2020-12-01),
15. 10847199 - MRAM array having reference cell structure and circuitry that reinforces reference states by induced magnetic field (2020-11-24),

Title: The Innovative Contributions of Kuk-Hwan Kim in Magnetic Memory Technology

Introduction: Kuk-Hwan Kim, a prominent inventor based in San Jose, CA, has made significant strides in the field of magnetic memory technology, evidenced by his impressive portfolio of 62 patents. His pioneering work has contributed to advancements in three-dimensional magnetic tunnel junctions and integrated circuits, shaping the future of data storage solutions.

Latest Patents: Two of Kuk-Hwan Kim's latest patents exemplify his innovative approach. The first patent, titled "Three Dimensional Perpendicular Magnetic Tunnel Junction with Thin Film Transistor Array," outlines a method for manufacturing a magnetic random access memory array. This method includes forming source regions within the surface of a substrate, creating an array of three-dimensional structures, and depositing materials to enhance performance. The second patent, "Patterned Silicide Structures and Methods of Manufacture," focuses on integrated circuits consisting of trenches disposed in a substrate around silicide regions, essential for improving semiconductor materials and device fabrication.

Career Highlights: Throughout his career, Kuk-Hwan Kim has contributed to leading companies in the semiconductor industry, including Spin Memory, Inc. and Crossbar, Inc. His work at these organizations has continually pushed the boundaries of technology and innovation in memory systems.

Collaborations: Kim has engaged in noteworthy collaborations with esteemed colleagues, including Amitay Levi and Dafna Beery. These partnerships have facilitated the exchange of ideas and fostered innovation within the field, leading to advancements in memory technology and its applications.

Conclusion: Kuk-Hwan Kim's contributions as an inventor in the realm of magnetic memory technology demonstrate his commitment to innovation. With his extensive patent portfolio and collaboration with leading experts, Kim continues to play a pivotal role in the evolution of data storage solutions, positioning him as a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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