San Jose, CA, United States of America

Kuk-Hwan Kim

USPTO Granted Patents = 62 

 

Average Co-Inventor Count = 3.5

ph-index = 7

Forward Citations = 426(Granted Patents)

Forward Citations (Not Self Cited) = 382(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Ann Arbor, MI (US) (2011 - 2016)
  • Santa Clara, CA (US) (2016)
  • Fremont, CA (US) (2019 - 2023)
  • Milpitas, CA (US) (2023)
  • San Jose, CA (US) (2013 - 2024)

Company Filing History:


Years Active: 2011-2024

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62 patents (USPTO):

Title: The Innovative Contributions of Kuk-Hwan Kim in Magnetic Memory Technology

Introduction: Kuk-Hwan Kim, a prominent inventor based in San Jose, CA, has made significant strides in the field of magnetic memory technology, evidenced by his impressive portfolio of 62 patents. His pioneering work has contributed to advancements in three-dimensional magnetic tunnel junctions and integrated circuits, shaping the future of data storage solutions.

Latest Patents: Two of Kuk-Hwan Kim's latest patents exemplify his innovative approach. The first patent, titled "Three Dimensional Perpendicular Magnetic Tunnel Junction with Thin Film Transistor Array," outlines a method for manufacturing a magnetic random access memory array. This method includes forming source regions within the surface of a substrate, creating an array of three-dimensional structures, and depositing materials to enhance performance. The second patent, "Patterned Silicide Structures and Methods of Manufacture," focuses on integrated circuits consisting of trenches disposed in a substrate around silicide regions, essential for improving semiconductor materials and device fabrication.

Career Highlights: Throughout his career, Kuk-Hwan Kim has contributed to leading companies in the semiconductor industry, including Spin Memory, Inc. and Crossbar, Inc. His work at these organizations has continually pushed the boundaries of technology and innovation in memory systems.

Collaborations: Kim has engaged in noteworthy collaborations with esteemed colleagues, including Amitay Levi and Dafna Beery. These partnerships have facilitated the exchange of ideas and fostered innovation within the field, leading to advancements in memory technology and its applications.

Conclusion: Kuk-Hwan Kim's contributions as an inventor in the realm of magnetic memory technology demonstrate his commitment to innovation. With his extensive patent portfolio and collaboration with leading experts, Kim continues to play a pivotal role in the evolution of data storage solutions, positioning him as a key figure in the industry.

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