The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Aug. 16, 2021
Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;
Kuk-Hwan Kim, Fremont, CA (US);
Dafna Beery, Fremont, CA (US);
Marcin Gajek, Berkeley, CA (US);
Michail Tzoufras, Sunnyvale, CA (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Eric Ryan, Fremont, CA (US);
Satoru Araki, San Jose, CA (US);
Andy Walker, Fremont, CA (US);
Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;
Abstract
Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.