The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Dec. 31, 2018
Spin Memory, Inc., Fremont, CA (US);
Kuk-Hwan Kim, San Jose, CA (US);
Dafna Beery, Palo Alto, CA (US);
Marcin Gajek, Berkeley, CA (US);
Michail Tzoufras, Sunnyvale, CA (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Eric Michael Ryan, Fremont, CA (US);
Satoru Araki, San Jose, CA (US);
Andrew J. Walker, Mountain View, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A method for crystalized silicon structures from amorphous structures in a magnetic memory array, wherein the temperature needed to crystalize the amorphous silicon is lower than the temperature budget of the memory element so as to avoid damage to the memory element. An amorphous silicon is deposited, followed by a layer of Ti or Co. An annealing process is then performed which causes the Ti or Co to form TiSior CoSiand also causes the underlying amorphous silicon to crystallize.