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Fremont, CA, United States of America

Spin Memory, Inc.

USPTO Granted Patents = 146

Trademarks = 3

Forward Citations = 349

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51 inventors (with patents filed for the assignee):

Mustafa Pinarbasi (36 out of 251 patents)

Kuk-Hwan Kim (33 out of 62 patents)

Marcin Gajek (31 out of 42 patents)

4. Neal Berger (30 out of 72 patents)

5. Benjamin S Louie (27 out of 130 patents)

6. Amitay Levi (26 out of 63 patents)

7. Dafna Beery (24 out of 41 patents)

8. Bartlomiej Adam Kardasz (24 out of 40 patents)

9. Michail Tzoufras (24 out of 34 patents)

10. Kadriye Deniz Bozdag (24 out of 26 patents)

11. Andrew J Walker (19 out of 89 patents)

12. Lester Crudele (19 out of 25 patents)

13. Eric Ryan (17 out of 20 patents)

14. Mourad El Baraji (16 out of 34 patents)

15. Jorge Vasquez (15 out of 24 patents)

Core Competencies:

Magnetic Tunnel Junction

Magnetic Random Access Memory

Error Cache System

Multi Terminal Device Stack

Spin-Orbit Torque Memory

Three-Dimensional Arrays

Noise Mitigation Techniques

Perpendicular Magnetic Anisotropy

Memory Array Architecture

Heterogeneous Magnetic Junctions

Memory Device Manufacturing

Magnetic Annealing Methods

146 patents: Sort by Forward Citations

1. 11119936 - Error cache system with coarse and fine segments for power optimization (2021-09-14),

2. 11119910 - Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments (2021-09-14),

3. 11107979 - Patterned silicide structures and methods of manufacture (2021-08-31),

4. 11107978 - Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer (2021-08-31),

5. 11107974 - Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer (2021-08-31),

6. 11094359 - High retention multi-level-series magnetic random-access memory (2021-08-17),

7. 11048633 - Determining an inactive memory bank during an idle memory cycle to prevent error cache overflow (2021-06-29),

8. 11010294 - MRAM noise mitigation for write operations with simultaneous background operations (2021-05-18),

9. 10991410 - Bi-polar write scheme (2021-04-27),

10. 10990465 - MRAM noise mitigation for background operations by delaying verify timing (2021-04-27),

11. 10983883 - Error recovery in magnetic random access memory after reflow soldering (2021-04-20),

12. 10971681 - Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chip (2021-04-06),

13. 10971680 - Multi terminal device stack formation methods (2021-04-06),

14. 10971245 - Measurement of MTJ in a compact memory array (2021-04-06),

15. 10962590 - Magnet mounting apparatus for MTJ device testers (2021-03-30),

Spin Memory, Inc. is a leading provider of MRAM (Magnetoresistive Random Access Memory) solutions. Their advanced memory technologies enable high-performance computing and storage systems, offering low-latency, high-density, and non-volatile memory solutions. Spin Memory is focused on revolutionizing data storage and computing by developing innovative MRAM solutions for various industries including AI, IoT, data centers, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

146 Patents

#20 in Fremont, CA

#599 in California

#2,587 in US

#5,422 in the World

Fremont, CA, United States of America

Spin Memory, Inc.

Forward Citations = 349

51 inventors:

Mustafa Pinarbasi (36 out of 251 patents)

Kuk-Hwan Kim (33 out of 62 patents)

Marcin Gajek (31 out of 42 patents)

4. Neal Berger (30 out of 72 patents)

5. Benjamin S Louie (27 out of 130 patents)

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