The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Dec. 05, 2018
Spin Transfer Technologies, Inc., Fremont, CA (US);
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Eric Michael Ryan, Fremont, CA (US);
Kuk-Hwan Kim, San Jose, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A method for manufacturing an array of magnetic memory elements, wherein first memory element types are formed in a first region and second type of magnetic memory element types are formed in a second region. A shadow-mask is used during deposition to limit the deposition of at least one layer of memory element material to only the second region wherein the second memory element types are to be formed. The method can include depositing full film magnetic memory element layers over an entire substrate and then using the shadow-mask to deposit at least one performance altering material in the second memory element region. Alternatively, a first shadow-mask can be used to deposit a series of first memory element layers in a first region, and a second shadow-mask can be used to deposit a plurality of second memory element layers in a second region.