Company Filing History:

19 out of 146

Spin Memory, Inc.

patents

4 out of 53

Integrated Silicon Solution, (cayman) Inc.

patents

2 out of 24

Spin Transfer Technologies, Inc.

patents

Years Active: 2019-2024

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25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11941299 - MRAM access coordination systems and methods via pipeline in parallel (2024-03-26),

2. 11386010 - Circuit engine for managing memory meta-stability (2022-07-12),

3. 11334288 - MRAM access coordination systems and methods with a plurality of pipelines (2022-05-17),

4. 11151042 - Error cache segmentation for power reduction (2021-10-19),

5. 11010294 - MRAM noise mitigation for write operations with simultaneous background operations (2021-05-18),

6. 10990465 - MRAM noise mitigation for background operations by delaying verify timing (2021-04-27),

7. 10891997 - Memory array with horizontal source line and a virtual source line (2021-01-12),

8. 10656994 - Over-voltage write operation of tunnel magnet-resistance ('TMR') memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques (2020-05-19),

9. 10628316 - Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register (2020-04-21),

10. 10546624 - Multi-port random access memory (2020-01-28),

11. 10529439 - On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects (2020-01-07),

12. 10489245 - Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them (2019-11-26),

13. 10481976 - Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers (2019-11-19),

14. 10460781 - Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank (2019-10-29),

15. 10446210 - Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers (2019-10-15),

Title: The Innovative Contributions of Lester Crudele in Memory Technology

Introduction: Lester Crudele, based in Tomball, TX, is an accomplished inventor with an impressive portfolio of 25 patents. His work, especially in memory technology, has significantly influenced the landscape of data storage and retrieval systems. Crudele's inventions showcase innovative methods and systems, particularly in the realm of Magnetic Random Access Memory (MRAM), enhancing memory cell density configuration and operational efficiency.

Latest Patents: Among his latest patents, two stand out for their technological advancements. The first patent describes "MRAM access coordination systems and methods via pipeline in parallel." This invention focuses on improving memory cell density configuration by organizing addressable MRAM cells into multiple banks and employing a pipeline for efficient access control. This approach allows for parallel operations, enhancing the overall performance of memory systems.

The second notable patent is for a "Circuit engine for managing memory meta-stability." This invention introduces a memory device that incorporates a memory bank of addressable memory cells along with a cache memory system. The cache stores data words awaiting write verification, ensuring seamless data processing and reliability in memory operations.

Career Highlights: Lester Crudele has had a remarkable career in the field of memory technology. He has worked for prestigious companies such as Spin Memory, Inc. and Integrated Silicon Solution, Inc., where he contributed to groundbreaking advancements in memory systems. His expertise has not only led to innovative products but has also paved the way for future developments in the industry.

Collaborations: Throughout his career, Crudele has collaborated with esteemed colleagues, including Neal Berger and Benjamin S. Louie. These partnerships have been instrumental in refining and advancing the technologies behind his patents, fostering a collaborative environment that emphasizes innovation and excellence in memory technology.

Conclusion: Lester Crudele's contributions to memory technology through his numerous patents highlight his role as a leading inventor in the field. His work on MRAM systems and memory management has not only influenced current technologies but also holds promise for future advancements. His innovative spirit and dedication to research continue to inspire the next generation of inventors and engineers.

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