For the Inventor, By the Inventor

Enter assignee name

Fremont, CA, United States of America

Spin Transfer Technologies, Inc.

Calculating rank

USPTO Granted Patents = 24

Trademarks = 3

Forward Citations = 795

Loading Chart...

Loading Chart...

25 inventors (with patents filed for the assignee):

Mustafa Pinarbasi (13 out of 251 patents)

Bartlomiej Adam Kardasz (6 out of 40 patents)

Kuk-Hwan Kim (5 out of 62 patents)

4. Amitay Levi (5 out of 63 patents)

5. Gian Sharma (5 out of 20 patents)

6. Neal Berger (4 out of 72 patents)

7. Benjamin S Louie (3 out of 132 patents)

8. Marcin Gajek (3 out of 42 patents)

9. Michail Tzoufras (3 out of 34 patents)

10. Mourad El-Baraji (3 out of 16 patents)

11. Bartek Kardasz (3 out of 4 patents)

12. Daniel L Hillman (2 out of 37 patents)

13. Lester Crudele (2 out of 25 patents)

14. Eric Ryan (2 out of 20 patents)

15. Manfred Ernst Schabes (2 out of 44 patents)

24 patents: Sort by Forward Citations

1. 10381553 - Memory cell having magnetic tunnel junction and thermal stability enhancement layer (2019-08-13),

2. 10211395 - Method for combining NVM class and SRAM class MRAM elements on the same chip (2019-02-19),

3. 10199083 - Three-terminal MRAM with ac write-assist for low read disturb (2019-02-05),

4. 10192984 - Dual threshold voltage devices with stacked gates (2019-01-29),

5. 10192789 - Methods of fabricating dual threshold voltage devices (2019-01-29),

6. 10192788 - Methods of fabricating dual threshold voltage devices with stacked gates (2019-01-29),

7. 10192787 - Methods of fabricating contacts for cylindrical devices (2019-01-29),

8. 10192602 - Smart cache design to prevent overflow for a memory device with a dynamic redundancy register (2019-01-29),

9. 10192601 - Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers (2019-01-29),

10. 10186551 - Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ) (2019-01-22),

11. 10186308 - Magnetic random access memory having improved reliability through thermal cladding (2019-01-22),

12. 10163479 - Method and apparatus for bipolar memory write-verify (2018-12-25),

13. 10147872 - Spin transfer torque structure for MRAM devices having a spin current injection capping layer (2018-12-04),

14. 10141499 - Perpendicular magnetic tunnel junction device with offset precessional spin current layer (2018-11-27),

15. 10115446 - Spin transfer torque MRAM device with error buffer (2018-10-30),

Company Overview

Spin Transfer Technologies, Inc. is a pioneering company based in Fremont, California, specializing in advanced spintronic technologies. The organization focuses on the development and manufacturing of innovative solutions that leverage spin-based phenomena for applications in data storage and processing. By harnessing the unique properties of electron spin, the company aims to enhance the performance and efficiency of electronic devices, contributing to the evolution of next-generation computing and memory systems.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

24 Patents

#89 in Fremont, CA

#3,290 in California

#13,895 in US

#26,686 in the World

Fremont, CA, United States of America

Spin Transfer Technologies, Inc.

Forward Citations = 795

25 inventors:

Mustafa Pinarbasi (13 out of 251 patents)

Bartlomiej Adam Kardasz (6 out of 40 patents)

Kuk-Hwan Kim (5 out of 62 patents)

4. Amitay Levi (5 out of 63 patents)

5. Gian Sharma (5 out of 20 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Spin Transfer Technologies, Inc.. Retrieved from https://idiyas.com/company/spin-transfer-technologies

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

Loading…