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Fremont, CA, United States of America

Spin Transfer Technologies, Inc.

USPTO Granted Patents = 24

Trademarks = 3

Forward Citations = 795

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25 inventors (with patents filed for the assignee):

Mustafa Pinarbasi (13 out of 251 patents)

Bartlomiej Adam Kardasz (6 out of 40 patents)

Kuk-Hwan Kim (5 out of 62 patents)

4. Amitay Levi (5 out of 63 patents)

5. Gian Sharma (5 out of 20 patents)

6. Neal Berger (4 out of 72 patents)

7. Benjamin S Louie (3 out of 131 patents)

8. Marcin Gajek (3 out of 42 patents)

9. Michail Tzoufras (3 out of 34 patents)

10. Mourad El-Baraji (3 out of 16 patents)

11. Bartek Kardasz (3 out of 4 patents)

12. Daniel L Hillman (2 out of 37 patents)

13. Lester Crudele (2 out of 25 patents)

14. Eric Ryan (2 out of 20 patents)

15. Manfred Ernst Schabes (2 out of 44 patents)

24 patents: Sort by Forward Citations

1. 10381553 - Memory cell having magnetic tunnel junction and thermal stability enhancement layer (2019-08-13),

2. 10211395 - Method for combining NVM class and SRAM class MRAM elements on the same chip (2019-02-19),

3. 10199083 - Three-terminal MRAM with ac write-assist for low read disturb (2019-02-05),

4. 10192984 - Dual threshold voltage devices with stacked gates (2019-01-29),

5. 10192789 - Methods of fabricating dual threshold voltage devices (2019-01-29),

6. 10192788 - Methods of fabricating dual threshold voltage devices with stacked gates (2019-01-29),

7. 10192787 - Methods of fabricating contacts for cylindrical devices (2019-01-29),

8. 10192602 - Smart cache design to prevent overflow for a memory device with a dynamic redundancy register (2019-01-29),

9. 10192601 - Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers (2019-01-29),

10. 10186551 - Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ) (2019-01-22),

11. 10186308 - Magnetic random access memory having improved reliability through thermal cladding (2019-01-22),

12. 10163479 - Method and apparatus for bipolar memory write-verify (2018-12-25),

13. 10147872 - Spin transfer torque structure for MRAM devices having a spin current injection capping layer (2018-12-04),

14. 10141499 - Perpendicular magnetic tunnel junction device with offset precessional spin current layer (2018-11-27),

15. 10115446 - Spin transfer torque MRAM device with error buffer (2018-10-30),

Spin Transfer Technologies is a leading provider of magnetoresistive random-access memory (MRAM) technology for advanced computing and data storage applications. The company's ST-MRAM solutions offer high-speed, low-power performance with non-volatile memory capabilities, enabling next-generation electronics with increased efficiency and reliability.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

24 Patents

#89 in Fremont, CA

#3,277 in California

#13,841 in US

#26,555 in the World

Fremont, CA, United States of America

Spin Transfer Technologies, Inc.

Forward Citations = 795

25 inventors:

Mustafa Pinarbasi (13 out of 251 patents)

Bartlomiej Adam Kardasz (6 out of 40 patents)

Kuk-Hwan Kim (5 out of 62 patents)

4. Amitay Levi (5 out of 63 patents)

5. Gian Sharma (5 out of 20 patents)

Please report any incorrect information to [email protected]

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