The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Dec. 29, 2017
Applicant:
Spin Transfer Technologies, Inc., Fremont, CA (US);
Inventors:
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Marcin Jan Gajek, Berkeley, CA (US);
Michail Tzoufras, Sunnyvale, CA (US);
Eric Michael Ryan, Fremont, CA (US);
Assignee:
Spin Transfer Technologies, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); B82Y 25/00 (2011.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); B82Y 25/00 (2013.01); G11C 11/1675 (2013.01); H01L 27/226 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a three-terminal structure, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.