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For the Inventor, By the Inventor

Saratoga, CA, United States of America

Manfred Ernst Schabes

This inventor holds 44 USPTO granted patents and 1 published patent application, primarily in Magnetic Recording Technology. Top assignees: Hitachi Global Storage Technologies Netherlands B.v., Hgst Netherlands, B.v., Spin Memory, Inc.. Active years: 2001-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Manfred Ernst Schabes. Retrieved from https://idiyas.com/inventor/manfred-ernst-schabes

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 

% Patents Active = 72.7

Average Co-Inventor Count = 3.0

ph-index = 14

Forward Citations = 577(Granted Patents)


Location History:

  • San Jose, CA (US) (2001 - 2004)
  • Campbell, CA (US) (2004)
  • Saratoga, CA (US) (2010 - 2019)
  • Fremont, CA (US) (2019)

Company Filing History:

goldMedal17 out of 2,636 
 
Hitachi Global Storage Technologies Netherlands B.v.
 patents
silverMedal11 out of 987 
 
Hgst Netherlands, B.v.
 patents
bronzeMedal8 out of 146 
 
Spin Memory, Inc.
 patents
4. 5 out of 166,325 
 
International Business Machines Corporation
 patents
5. 2 out of 24 
 
Spin Transfer Technologies, Inc.
 patents
6. 1 out of 2 
 
Hsgt Netherlands B.v.
 patents

Years Active: 2001-2019

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Areas of Expertise:
Magnetic Tunnel Junction
Perpendicular Magnetic Recording
MRAM
Skyrmionic Enhancement
Data Preservation
Spin Torque Oscillator
Patterned Media
Magnetic Storage Medium
Error-Correcting Code
Thermal Assisted Recording
Magnetic Precession
Magnetic Recording System
44 patents (USPTO):Explore Patents
1. 10468588 - Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer (2019-11-05),
2. 10424723 - Magnetic tunnel junction devices including an optimization layer (2019-09-24),
3. 10374147 - Perpendicular magnetic tunnel junction having improved reference layer stability (2019-08-06),
4. 10367139 - Methods of manufacturing magnetic tunnel junction devices (2019-07-30),
5. 10361359 - Magnetic random access memory with reduced internal operating temperature range (2019-07-23),
6. 10339993 - Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching (2019-07-02),
7. 10319900 - Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density (2019-06-11),
8. 10236439 - Switching and stability control for perpendicular magnetic tunnel junction device (2019-03-19),
9. 10141499 - Perpendicular magnetic tunnel junction device with offset precessional spin current layer (2018-11-27),
10. 10032978 - MRAM with reduced stray magnetic fields (2018-07-24),
11. 9236076 - Perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material (2016-01-12),
12. 9142239 - Patterned magnetic storage medium (2015-09-22),
13. 8937783 - Magnetic data recording system with improved servo capability for bit patterned recording (2015-01-20),
14. 8824075 - Templated granular magnetic recording media (2014-09-02),
15. 8821736 - Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material (2014-09-02),

Title: The Innovative Genius of Manfred Ernst Schabes

Introduction

Manfred Ernst Schabes, based in Saratoga, California, is a prolific inventor with an impressive portfolio of 44 patents. His work has significantly advanced the field of magnetoresistive random-access memory (MRAM) technology, showcasing a commitment to innovation that has marked his career.

Latest Patents

Among his latest patents, Schabes has developed a groundbreaking perpendicular magnetic tunnel junction device featuring skyrmionic enhancement layers for the precessional spin current magnetic layer. This MRAM device comprises a reference layer, a free layer, and a precessional spin current magnetic layer, with a skyrmionic enhancement layer positioned adjacent to it. This enhancement layer plays a crucial role in improving the response of the precessional spin current magnetic layer to applied spin-polarized currents.

Additionally, Schabes has created a magnetic tunnel junction (MTJ) device with pillar contacts that couple the free magnetic layer of cell pillars to a top contact. These pillar contacts are electrically isolated from other portions of the cell pillar by self-aligned sidewall insulators. The MTJ device also incorporates either a static magnetic compensation layer or an exchange spring layer within the cell pillar, further refining its functionality.

Career Highlights

Schabes has had a distinguished career, particularly during his tenure at Hitachi Global Storage Technologies Netherlands B.V. and HGST Netherlands B.V. His engineering expertise and innovative spirit have paved the way for advancements in storage technologies, earning him recognition in the field.

Collaborations

Throughout his career, Schabes has collaborated with notable professionals such as Mustafa Pinarbasi and Bartlomiej Adam Kardasz. These collaborations have likely contributed to the innovative developments in his patents, showcasing the importance of teamwork in the inventive process.

Conclusion

Manfred Ernst Schabes exemplifies the role of innovation in technology through his extensive patent portfolio and groundbreaking developments in MRAM technology. His contributions continue to influence the field and inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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