logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10374147 B1

PDFFull Text
Date of Patent:
Aug. 06, 2019

Filed:

Dec. 30, 2017

Perpendicular magnetic tunnel junction having improved reference layer stability

Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Mustafa Pinarbasi, Morgan Hill, CA (US);

Bartlomiej Adam Kardasz, Pleasanton, CA (US);

Jorge Vasquez, San Jose, CA (US);

Manfred Ernst Schabes, Saratoga, CA (US);

Assignee:

SPIN MEMORY, INC., Fremont, CA (US);

Attorney:

Zilka-Kotab, P.C.

Primary Examiner:

Viet Q Nguyen

Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/15 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic reference layer includes a layer of Hf that causes the magnetic reference layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves reliability and stability of the magnetic data recording element by preventing loss of magnetic orientation of the magnetic reference layer such as during high writing current conditions.

Find Patent Forward Citations

Pinarbasi, Mustafa. (2019). Perpendicular magnetic tunnel junction having improved reference layer stability (U.S. Patent No. 10374147). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10374147

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…