Location History:
- Fremont, CA (US) (2019 - 2023)
- San Jose, CA (US) (2012 - 2024)
Company Filing History:
15 out of 146 
7 out of 53 
1 out of 52 
Years Active: 2012-2024
Title: Jorge Vasquez: Innovator in Magnetic Random Access Memory Technology
Introduction
Jorge Vasquez is a prominent inventor based in San Jose, CA, with an impressive portfolio of 24 patents. His innovative contributions primarily focus on the field of magnetic random-access memory (MRAM), showcasing his expertise and commitment to advancing technology in this domain.
Latest Patents
One of Jorge's latest inventions is a "Method for manufacturing a magnetic random-access memory device using post pillar formation annealing." This patent outlines a method that allows for back end of line annealing of processing circuitry while preventing thermal damage to the magnetic memory elements within the memory array. The process includes the formation of magnetic memory element pillars on a wafer surrounded by dielectric isolation material, followed by an annealing process to achieve the desired grain structure and optimal thermal processing.
Another significant patent is titled "High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices." This disclosure describes a magnetic random access memory element that consists of a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer. The invention employs a multilayer MgO configuration that ensures excellent interfacial perpendicular magnetic anisotropy and lowRA, enhancing the performance of MRAM devices.
Career Highlights
Throughout his career, Jorge Vasquez has worked with notable companies, including Spin Memory, Inc. and Integrated Silicon Solution (Cayman) Inc. His innovative spirit and technical knowledge have made significant contributions to the development of advanced memory technologies, positioning him as a valuable figure in the tech industry.
Collaborations
Jorge has collaborated with esteemed colleagues such as Mustafa Pinarbasi and Bartlomiej Adam Kardasz. Together, they have shared insights and expertise that have furthered research and development in MRAM technology, fostering an environment of innovation and collaboration.
Conclusion
Jorge Vasquez's significant contributions to the field of magnetic random-access memory through his 24 patents mark him as a key inventor in this specialized area. His innovative methodologies and collaborations have paved the way for advancements in memory technology, underscoring the impact that dedicated inventors like Jorge have on the future of technology.