The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
May. 01, 2019
Spin Memory, Inc., Fremont, CA (US);
Mustafa Pinarbasi, Morgan Hill, CA (US);
Pradeep Manandhar, Fremont, CA (US);
Jorge Vasquez, San Jose, CA (US);
Bartlomiej Adam Kardasz, Pleasanton, CA (US);
Thomas D. Boone, San Carlos, CA (US);
SPIN MEMORY, INC., Fremont, CA (US);
Abstract
A method for manufacturing a magnetic memory element structure using a Ru hard mask and a post pillar thermal annealing process. A Ru hard mask is formed over a plurality of memory element layers and an ion milling is performed to transfer the image of the Ru hard mask onto the underlying memory element layers. A high-angle ion milling an be performed to remove any redeposited material from the sides of the memory element layers, and a non-magnetic, dielectric material can be deposited. A thermal annealing process can then be performed to repair any damage caused by the previously performed ion milling processes.