The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Dec. 29, 2017
Applicant:
Spin Memory, Inc., Fremont, CA (US);
Inventors:
Bartlomiej Kardasz, Fremont, CA (US);
Jorge Vasquez, Fremont, CA (US);
Mustafa Pinarbasi, Fremont, CA (US);
Assignee:
Spin Memory, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01F 41/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 41/325 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01);
Abstract
A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.