The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Jan. 23, 2022
Applicant:

Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;

Inventors:

Bartlomiej Adam Kardasz, Pleasanton, CA (US);

Jorge Vasquez, San Jose, CA (US);

Mustafa Pinarbasi, Morgan Hill, CA (US);

Georg Wolf, San Francisco, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H01F 41/307 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H01F 10/3272 (2013.01); H01F 10/329 (2013.01);
Abstract

The disclosure provides a magnetic random access memory element. The magnetic random access memory element includes a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer between the magnetic free layer and the magnetic reference layer. The magnetic random access memory element further includes a MgO layer contacting the magnetic free layer. The MgO layer includes multiple homogeneous layers of MgO that provide excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.


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