Spin Memory, Inc.

Integrated Silicon Solution, (cayman) Inc.

Solopower, Inc.

Solopower Systems, Inc.

Amazon Technologies, Inc.

Jorge Vasquez

Mustafa Pinarbasi

Bartlomiej Adam Kardasz

Georg Wolf

Danny Yam

Thomas D Boone

Roberto Cordero

James Mac Freitag

Manfred Ernst Schabes

Harvo Reyzell Jones

Hardeep Singh Uppal

Anton Stephen Radlein

Jacob Anthony Hernandez

Cheng Wei Chiu

Pradeep Manandhar

Girish Jagtiani

Axel David Velazquez

Kevin Bliss

Fan Mo

A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

The disclosure provides a magnetic random access memory element. The magnetic random access memory element includes a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer between the magnetic free layer and the magnetic reference layer. The magnetic random access memory element further includes a MgO layer contacting the magnetic free layer. The MgO layer includes multiple homogeneous layers of MgO that provide excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.

High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices

A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Ru) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.

Methods of manufacture precessional spin current magnetic tunnel junction devices

A magnetic memory element having a magnetic free layer and a magnetic reference layer with a non-magnetic barrier layer between the magnetic reference layer and the magnetic free layer. A spin current layer (which may be a precessional spin current layer) is located adjacent to the magnetic free layer and is separated from the magnetic free layer by a non-magnetic coupling layer. A material layer adjacent to and in contact with the spin current layer, has a material composition and thickness that are chosen to provide a desired effective magnetization in the spin current layer. The material layer, which may be a capping layer or a seed layer, can be constructed of a material other than tantalum which may include one or more of Zr, Mo, Ru, Rh, Pd, Hf, W, Ir, Pt and/or alloys and/or nitrides of these elements.

Precessional spin current structure for magnetic random access memory with novel capping materials

A method for manufacturing a magnetic random access memory element having increased retention and low resistance area product (RA). A MgO layer is deposited to contact a magnetic free layer of the memory element. The MgO layer is deposited in a sputter deposition chamber using a DC power and a Mg target to deposit Mg. The deposition of Mg is periodically stopped and oxygen introduced into the deposition chamber. This process is repeated a desired number of times, resulting in a multi-layer structure. The resulting MgO layer provides excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.

A magnetic field transducer mounting apparatus can include a first mount configured to fixedly couple to a side surface of a wafer test fixture magnet, and a second and third mount configured to adjustably position a magnetic field transducer in a predetermined location proximate a face of the wafer test fixture magnet.

Magnetic field transducer mounting methods for MTJ device testers

A magnet mounting apparatus including a cage, a magnet carriage and first actuator for use in testing Magnetic Tunnel Junction (MTJ) devices. The cage can be configured for mounting to an Automated Test Equipment (ATE). The magnet carriage can be configured for coupling to a wafer test magnet. The first actuator can be coupled between the cage and the magnet carriage. The first actuator can be configured to move the magnet carriage between a first position and a second position along a z-axis. The first position can be configured for locating the wafer test magnet within a predetermined proximity to a Device Under Test (DUT) wafer, and the second position can be configured for replacing a probe card.

Magnet mounting apparatus for MTJ device testers

A method for manufacturing a magnetic memory element structure using a Ru hard mask and a post pillar thermal annealing process. A Ru hard mask is formed over a plurality of memory element layers and an ion milling is performed to transfer the image of the Ru hard mask onto the underlying memory element layers. A high-angle ion milling an be performed to remove any redeposited material from the sides of the memory element layers, and a non-magnetic, dielectric material can be deposited. A thermal annealing process can then be performed to repair any damage caused by the previously performed ion milling processes.

Method for manufacturing magnetic memory element with post pillar formation annealing

A magnetic memory element for using in magnetic random access memory. The magnetic memory element includes a novel exchange coupling layer for use in an antiferromagnetic structure for magnetically pinning a magnetic reference layer of the memory element. The exchange coupling layer is located between a first magnetic layer (reference layer) and a second magnetic layer (keeper layer). The exchange coupling layer includes a layer of Ru located between first and second layers of Ir. The Ir layers can be in contact with each of the first and second magnetic layers to provide an interfacial magnetic anisotropy, as well as providing RKKY exchange field. The Ru layer, provides an increased RKKY exchange field as a result of the high RKKY exchange coupling of Ru.

Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application

Semiconductor substrate adaptor configured to adapt a substrate of a first dimension to a second dimension, such that the substrate can be properly supported by a supporting mechanism (e.g., a wafer cassette) customized for substrates of the second dimension. The substrate adaptor may be made of quartz. The combination of the substrate adaptor and a substrate fitting therein causes no perturbation in various aspects of a semiconductor process. Therefore, the substrate adaptor conveniently enables a substrate of the first dimension to be processed in the same processing equipment and conditions as a substrate of the second dimension. A vertical substrate adaptor may have a semicircular body with a semicircular cutout for accommodating a wafer and can support a wafer vertically. A horizontal substrate adaptor may have a circular body with a circular cutout for accommodating an entire wafer and supporting the wafer horizontally.

Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same

A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.

Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture

A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Re) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.

Precessional spin current magnetic tunnel junction devices and methods of manufacture

Magnetic field transducer mounting apparatus for MTJ device testers

A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic free layer includes a layer of Hf that causes the magnetic free layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves data retention and increases thermal stability, by preventing the magnetization of the magnetic free layer from inadvertently losing its magnetic orientation.

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San Jose, CA, United States of America

Jorge Vasquez