The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Dec. 29, 2017
Applicant:
Spin Transfer Technologies, Inc., Fremont, CA (US);
Inventors:
Thomas Boone, Fremont, CA (US);
Pradeep Manandhar, Fremont, CA (US);
Manfred Schabes, Fremont, CA (US);
Bartlomiej Kardasz, Fremont, CA (US);
Mustafa Pinarbasi, Fremont, CA (US);
Assignee:
Spin Memory, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A method of manufacturing a Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of MTJ pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the MTJ pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the MTJ pillar.