Hitachi Global Storage Technologies Netherlands B.v.

Hgst Netherlands, B.v.

Spin Memory, Inc.

International Business Machines Corporation

Spin Transfer Technologies, Inc.

Hsgt Netherlands B.v.

Manfred Ernst Schabes

Mustafa Pinarbasi

Bartlomiej Adam Kardasz

John Thomas Contreras

Thomas R Albrecht

Bruce Alvin Gurney

Michael Grobis

Eric Edward Fullerton

Barry C Stipe

Ernesto Esteban Marinero

David Thomas Margulies

Thomas D Boone

Kentaro Takano

Xinzhi Xing

Gabriel Zeltzer

Matthew Joseph Carey

Dieter Klaus Weller

Kurt A Rubin

Hal Jervis Rosen

Ricardo Ruiz

Olav Hellwig

Xiao Z Wu

Qing Zhu

Michael Alex

Pradeep Manandhar

Dan Saylor Kercher

Yoshiaki Sonobe

Shi-Ling Chang Wang

David John Seagle

Jeffrey Childress

Bruce Alexander Wilson

Mario Blaum

Martin Aureliano Hassner

Jordan Asher Katine

Yimin Hsu

Petrus Antonius Van Der Heijden

Barry Marshall Trager

Kai Tang

Hoa Van Do

Mary Frances Doerner

Michael Anthony Moser

Yoshihiro Ikeda

Jorge Vasquez

Bertrand Gabillard

Francesco Brianti

Thomas Hauet

Alan C Lam

William G McChesney

Han Zou

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.

Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer

A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.

Magnetic tunnel junction devices including an optimization layer

A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic reference layer includes a layer of Hf that causes the magnetic reference layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves reliability and stability of the magnetic data recording element by preventing loss of magnetic orientation of the magnetic reference layer such as during high writing current conditions.

Perpendicular magnetic tunnel junction having improved reference layer stability

A method of manufacturing a Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of MTJ pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the MTJ pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the MTJ pillar.

Methods of manufacturing magnetic tunnel junction devices

A Magnetic Random Access Memory apparatus device having a memory element formed as a magnetic tunnel junction (MTJ) pillar and having a heating element for maintaining a desired minimum temperature of the memory element. The heating element is separated from the memory element by a thin, non-magnetic, electrically insulating wall, which can be constructed of alumina. The heating element is connected with circuitry that controllably delivers electrical current to the heating element to maintain a desired minimum temperature of the memory element.

Magnetic random access memory with reduced internal operating temperature range

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the free layer. The skyrmionic enhancement layer helps to initiate the switching of the free layer.

Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a non-uniform moment density, and may have a moment density at its center that is greater than a moment density at its perimeter. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The decreased moment density at the perimeter of the precessional spin current layer helps to stabilize the free layer when the effective magnetic field of the precessional spin current layer is high. Spin accumulation can be increased near the center of the precessional spin current layer, helping to switch the free layer.

Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a diameter that is different from a diameter of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted.

Switching and stability control for perpendicular magnetic tunnel junction device

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a central axis that is offset from a central axis of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The off-center design may be used to adjust the location of the stray-field injection in the free layer.

Perpendicular magnetic tunnel junction device with offset precessional spin current layer

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device reduces stray magnetic fields generated by magnetic layers of the stack, including a reference layer and magnetic layers of the synthetic antiferromagnetic layer, in a way that reduces their impact on the other layers of the stack, including a free layer and an optional filter layer, which may include a polarizer layer or a precessional spin current magnetic layer. The reduction in stray magnetic fields in the stack increases the electrical and retention performance of the stack by reducing switching asymmetry in the free layer. The reduction in stray magnetic fields also may improve performance of a filter layer, such as a precessional spin current magnetic layer by reducing asymmetry in the dynamic magnetic rotation of that layer.

MRAM with reduced stray magnetic fields

A perpendicular magnetic recording disk includes a template layer below a Ru or Ru alloy underlayer, with a granular Co alloy recording layer formed on the underlayer. substrate. The template layer comprises nanoparticles spaced-apart and partially embedded within a polymer material, with the nanoparticles protruding above the surface of the polymer material. A seed layer covers the surface of the polymer material and the protruding nanoparticles and an underlayer of Ru or a Ru alloy covers the seed layer. The protruding nanoparticles serve as the controlled nucleation sites for the Ru or Ru alloy atoms. The nanoparticle-to-nanoparticle distances can be controlled during the formation of the template layer. This enables control of the Co alloy grain diameter distribution as well as grain-to-grain distance distribution.

Perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material

According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a magnetic domain, a substantially non-magnetic region laterally adjacent to the magnetic domain, and an exchange spring structure disposed between the magnetic domain and the laterally adjacent non-magnetic region wherein the exchange spring structure comprises implanted ions.

Patterned magnetic storage medium

A magnetic data recording system wherein the wherein adjacent track interference during writing is avoided by modulating the size of a write bubble on the magnetic media in response to a position error signal. If the position error signal indicates that the magnetic head is off-track, circuitry within the magnetic data recording system adjusts the size of the write bubble temporarily to prevent the write bubble from encroaching on a neighboring data track. This adjustment of the write bubble can be accomplished by adjusting power to the write head. Adjustment of the write bubble can also be achieved by adjusting power to a magnetic oscillator in a microwave assisted magnetic recording system (MAMR) or adjusting power to a heating element in a thermally assisted magnetic recording system.

Magnetic data recording system with improved servo capability for bit patterned recording

A method for making a perpendicular magnetic recording disk includes forming a template layer below a Ru or Ru alloy underlayer, with a granular Co alloy recording layer formed on the underlayer. The template layer is formed by depositing a solution of a polymer with a functional end group and nanoparticles, allowing the solution to dry, annealing the polymer layer to thereby form a polymer layer with embedded spaced-apart nanoparticles, and then etching the polymer layer to a depth sufficient to partially expose the nanoparticles so they protrude above the surface of the polymer layer. The protruding nanoparticles serve as controlled nucleation sites for the Ru or Ru alloy atoms. The nanoparticle-to-nanoparticle distances can be controlled during the formation of the template layer. This enables control of the Co alloy grain diameter distribution as well as grain-to-grain distance distribution.

Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material

A system and method for recording data to a perpendicular magnetic recording media having a highly ordered granular structure. The method includes the synchronization of write frequency and write phase to the granular structure of the magnetic media optimize performance of the magnetic data recording system by minimizing bit error rate.

Templated granular magnetic recording media

Growing community of inventors

Saratoga, CA, United States of America

Manfred Ernst Schabes