The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Jan. 05, 2018
Spin Memory, Inc., Fremont, CA (US);
Manfred Ernst Schabes, Saratoga, CA (US);
Mustafa Michael Pinarbasi, Morgan Hill, CA (US);
Bartlomiej Adam Kardasz, Pleasanton, CA (US);
Spin Memory, Inc., Fremont, CA (US);
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile