The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Jun. 27, 2017
Spin Transfer Technologies, Inc., Fremont, CA (US);
Manfred Ernst Schabes, Saratoga, CA (US);
Bartlomiej Adam Kardasz, Pleasanton, CA (US);
Mustafa Pinarbasi, Morgan Hill, CA (US);
SPIN TRANSFER TECHNOLOGIES, INC., Fremont, CA (US);
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device reduces stray magnetic fields generated by magnetic layers of the stack, including a reference layer and magnetic layers of the synthetic antiferromagnetic layer, in a way that reduces their impact on the other layers of the stack, including a free layer and an optional filter layer, which may include a polarizer layer or a precessional spin current magnetic layer. The reduction in stray magnetic fields in the stack increases the electrical and retention performance of the stack by reducing switching asymmetry in the free layer. The reduction in stray magnetic fields also may improve performance of a filter layer, such as a precessional spin current magnetic layer by reducing asymmetry in the dynamic magnetic rotation of that layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile