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For the Inventor, By the Inventor

Fremont, CA, United States of America

Mourad El-Baraji

USPTO Granted Patents = 16

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 69(Granted Patents)


Company Filing History:

goldMedal13 out of 146 
 
Spin Memory, Inc.
 patents
silverMedal3 out of 24 
 
Spin Transfer Technologies, Inc.
 patents

Years Active: 2018-2020

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16 patents (USPTO):Explore Patents
1. 10656994 - Over-voltage write operation of tunnel magnet-resistance ('TMR') memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques (2020-05-19),
2. 10628316 - Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register (2020-04-21),
3. 10546624 - Multi-port random access memory (2020-01-28),
4. 10529439 - On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects (2020-01-07),
5. 10489245 - Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them (2019-11-26),
6. 10481976 - Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers (2019-11-19),
7. 10460781 - Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank (2019-10-29),
8. 10446210 - Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers (2019-10-15),
9. 10437723 - Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device (2019-10-08),
10. 10437491 - Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register (2019-10-08),
11. 10366775 - Memory device using levels of dynamic redundancy registers for writing a data word that failed a write operation (2019-07-30),
12. 10360964 - Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device (2019-07-23),
13. 10347314 - Method and apparatus for bipolar memory write-verify (2019-07-09),
14. 10192602 - Smart cache design to prevent overflow for a memory device with a dynamic redundancy register (2019-01-29),
15. 10192601 - Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers (2019-01-29),

Title: **Innovator Profile: Mourad El-Baraji**

Introduction

Mourad El-Baraji, a prominent inventor based in Fremont, California, has made significant contributions to the field of memory devices, holding an impressive portfolio of 16 patents. His work primarily focuses on advanced memory technologies, including techniques for enhancing the performance and reliability of memory systems.

Latest Patents

Among Mourad El-Baraji's latest patents is the innovation concerning an over-voltage write operation of tunnel magnet-resistance (TMR) memory devices. This invention introduces corrective measures for bit defects in STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) by employing on-the-fly bit failure detection and bit redundancy remapping techniques. The method entails reading a codeword within the STT-MRAM memory, identifying defective bits, and remapping these to a designated set of redundant bits, thereby ensuring data integrity.

Another noteworthy patent pertains to a memory device architecture featuring multiple memory banks, each integrated with a dedicated instruction pipeline and a dynamic redundancy register. This design facilitates efficient data storage by associating each memory bank with specific cache memories and processing pipelines, optimizing overall memory operations and enhancing performance.

Career Highlights

Mourad El-Baraji has made impactful contributions while working at Spin Memory, Inc. and Spin Transfer Technologies, Inc. His role in these organizations has been instrumental in advancing memory technology, positioning him as a key player in the innovation landscape.

Collaborations

Throughout his career, Mourad has collaborated with notable professionals in the field, including Neal Berger and Benjamin S. Louie. These collaborations have fostered a synergy of ideas that has propelled advancements in memory device technologies.

Conclusion

Mourad El-Baraji's innovative spirit and dedication to enhancing memory technologies are evident in his extensive patent portfolio and his impactful work with leading technology companies. As he continues to push the boundaries of what is possible in the realm of memory devices, his contributions are set to have lasting effects on the industry and beyond.

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