The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Oct. 24, 2017
Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventors:

Neal Berger, Cupertino, CA (US);

Benjamin Louie, Fremont, CA (US);

Mourad El-Baraji, Fremont, CA (US);

Lester Crudele, Tomball, TX (US);

Assignee:

Spin Memory, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G11C 29/00 (2006.01); G11C 11/16 (2006.01); G06F 11/07 (2006.01); G11C 29/12 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/76 (2013.01); G06F 11/0727 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1677 (2013.01); G11C 29/12 (2013.01); G11C 29/42 (2013.01); G11C 29/44 (2013.01); G11C 29/50008 (2013.01); G11C 29/789 (2013.01); G11C 29/814 (2013.01); G11C 29/816 (2013.01);
Abstract

A method for correcting bit defects in an STT-MRAM memory is disclosed. The method comprises executing a read before write operation in the STT-MRAM memory, wherein the STT-MRAM memory comprises a plurality of codewords, wherein each codeword comprises a plurality of redundant bits. The read before write operation comprises reading a codeword and mapping defective bits in the codeword. Further, the method comprises replacing the defective bits in the codeword with a corresponding redundant bit and executing a write operation with corresponding redundant bits in place of the defective bits.


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