The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jan. 24, 2019
Applicant:
Spin Memory, Inc., Fremont, CA (US);
Inventors:
Kadriye Deniz Bozdag, Sunnyvale, CA (US);
Mustafa Pinarbasi, Morgan Hill, CA (US);
Assignee:
SPIN MEMORY, INC., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A magnetic memory pillar structure having a plurality of magnetic memory elements connected in series, wherein switching of individual memory elements in the pillar structure can be accomplished based on differing switching current values of the magnetic memory elements. Each of the plurality of memory elements advantageously have similar retention values in spite of the different switching current values (latency values) as a result of a precessional spin current injection structure provided in the memory element or memory elements having the lower switching current value.