The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Sep. 20, 2019
Applicant:
Spin Memory, Inc., Fremont, CA (US);
Inventor:
Minh Quang Tran, San Jose, CA (US);
Assignee:
SPIN MEMORY, INC., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 29/50 (2006.01); H01L 27/22 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); H01L 27/222 (2013.01); G11C 2029/5004 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01L 43/02 (2013.01);
Abstract
A system and method for testing a magnetic memory cell in a bit cell array to determine whether the electrical resistance values of the memory cell are within acceptable parameters. The system and method allows for the determination of the electrical resistance of the memory cell without parasitic resistance associated with that memory cell in order to accurately determine the electrical resistance of the memory cell.
Quick Actions:
Tran, Minh. (2021). Measurement of mtj in a compact memory array (U.S. Patent No. 10971245). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10971245
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