The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Dec. 28, 2017
Applicant:

Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY (US);

Inventors:

Kuk-Hwan Kim, San Jose, CA (US);

Dafna Beery, Palo Alto, CA (US);

Amitay Levi, Cupertino, CA (US);

Andrew J. Walker, Mountain View, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7788 (2013.01); H01L 27/228 (2013.01); H01L 29/66666 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A transistor structure, according to one embodiment, includes: an epitaxially grown vertical channel, a word line which surrounds a middle portion of the vertical channel, and a p-MTJ sensor coupled to a first end of the vertical channel. The second side of the vertical channel is opposite the first side of the vertical channel along a plane perpendicular to a deposition direction. A magnetic device, according to another embodiment, includes: a plurality of transistor structures, each of the transistor structures comprising: an epitaxially grown vertical channel, a word line which surrounds a middle portion of the vertical channel, and a p-MTJ sensor coupled to a first end of the vertical channel.


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