For the Inventor, By the Inventor

Enter assignee name

Santa Clara, CA, United States of America

Crossbar, Inc.

USPTO Granted Patents = 252

EPO Patents = 4

Trademarks = 5

Forward Citations = 2,553

Loading Chart...

Loading Chart...

55 inventors (with patents filed for the assignee):

Sung Hyun Jo (109 out of 121 patents)

Hagop A Nazarian (87 out of 165 patents)

Scott Brad Herner (33 out of 125 patents)

4. Mehdi Asnaashari (31 out of 98 patents)

5. Sang Thanh Nguyen (26 out of 71 patents)

6. Tanmay Kumar (25 out of 85 patents)

7. Natividad Vasquez (22 out of 22 patents)

8. Sundar Narayanan (20 out of 35 patents)

9. Harry Yue Gee (20 out of 26 patents)

10. Steven Patrick Maxwell (18 out of 33 patents)

11. Wei Lu (16 out of 73 patents)

12. Kuk-Hwan Kim (12 out of 62 patents)

13. Mark Harold Clark (11 out of 42 patents)

14. Zhi Li (10 out of 11 patents)

15. Lin Shih Liu (7 out of 7 patents)

Core Competencies:

Non-Volatile Memory

Resistive Switching Memory

Cryptocurrency Hardware Wallet

Physical Unclonable Function

Error Correction

Memory Architecture

Secure Circuit Integration

Cell Cycling

Differential Programming

NAND Architecture

Capacitance Measurement

Embedded Inline Computing

252 patents: Sort by Forward Citations

1. 12488836 - Monotonic counter implemented in non-volatile resistive switching memory (2025-12-02),

2. 12437811 - Erase algorithm with a weak program pulse for non-volatile memory (2025-10-07),

3. 12423681 - Cryptocurrency hardware wallet on monolithic chip with common physical countermeasures and secure memory (2025-09-23),

4. 12368455 - Flexible and configurable bit error rate reduction for non-volatile memory (2025-07-22),

5. 12272399 - Differential programming of two-terminal resistive switching memory with program soaking and adjacent path disablement (2025-04-08),

6. 12254124 - Secure circuit integrated with memory layer (2025-03-18),

7. 12245527 - Non-stoichiometric resistive switching memory device and fabrication methods (2025-03-04),

8. 12211549 - Cell cycling to minimize resistive memory random number correlation (2025-01-28),

9. 12198760 - Differential programming of two-terminal memory with intrinsic error suppression and wordline coupling (2025-01-14),

10. 12166482 - Generating physical unclonable function data from a transistor of a semiconductor device (2024-12-10),

11. 12154624 - Differential programming of two-terminal memory with program detection and multi-path disablement (2024-11-26),

12. 12119058 - Error correction for identifier data generated from unclonable characteristics of resistive memory (2024-10-15),

13. 12100449 - Differential programming of two-terminal resistive switching memory with intrinsic error suppression (2024-09-24),

14. 12087397 - Dynamic host allocation of physical unclonable feature operation for resistive switching memory (2024-09-10),

15. 12080347 - Differential programming of two-terminal resistive switching memory with program soaking and adjacent path disablement (2024-09-03),

Crossbar, Inc. is a semiconductor technology company that develops and licenses resistive random-access memory (RRAM) technology. Their RRAM technology offers a faster, more reliable, and energy-efficient alternative to traditional non-volatile memory solutions. Crossbar's RRAM is ideal for a wide range of application markets, including artificial intelligence, Internet of Things (IoT), edge computing, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

252 Patents

#21 in Santa Clara, CA

#364 in California

#1,629 in US

#3,335 in the World

Santa Clara, CA, United States of America

Crossbar, Inc.

Forward Citations = 2,553

55 inventors:

Sung Hyun Jo (109 out of 121 patents)

Hagop A Nazarian (87 out of 165 patents)

Scott Brad Herner (33 out of 125 patents)

4. Mehdi Asnaashari (31 out of 98 patents)

5. Sang Thanh Nguyen (26 out of 71 patents)

Please report any incorrect information to support@idiyas.com

Loading…