logo

For the Inventor, By the Inventor

San Francisco, CA, United States of America

Natividad Vasquez

This inventor holds 23 USPTO granted patents, primarily in Resistive Memory Technology. Top assignee: Crossbar, Inc.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Natividad Vasquez. Retrieved from https://idiyas.com/inventor/natividad-vasquez

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23

% Patents Active = 73.9

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 128(Granted Patents)


Company Filing History:

goldMedal23 out of 258 
 
Crossbar, Inc.
 patents

Years Active: 2014-2026

Loading Chart...
Areas of Expertise:
Resistive Memory
RRAM Devices
Semiconductor Fabrication
Non-Volatile Memory
Dielectric Block Layer
Etch Stop Layer
Memory Cell Surfaces
Integrated-Circuit Processes
Silicon Based Memory
Chemical Mechanical Planarization
Ion Implantation
Barrier Structure
23 patents (USPTO):Explore Patents
1. 12672489 - Resistive switching memory having confined filament formation and methods thereof (2026-06-30),
2. 12075712 - Resistive switching memory devices and method(s) for forming the resistive switching memory devices (2024-08-27),
3. 11997932 - Resistive switching memory having confined filament formation and methods thereof (2024-05-28),
4. 11944020 - Using aluminum as etch stop layer (2024-03-26),
5. 10873023 - Using aluminum as etch stop layer (2020-12-22),
6. 10749110 - Memory stack liner comprising dielectric block layer material (2020-08-18),
7. 10522754 - Liner layer for dielectric block layer (2019-12-31),
8. 10319908 - Integrative resistive memory in backend metal layers (2019-06-11),
9. 10290801 - Scalable silicon based resistive memory device (2019-05-14),
10. 10192927 - Semiconductor device for a non-volatile (NV) resistive memory and array structure for an array of NV resistive memory (2019-01-29),
11. 10115819 - Recessed high voltage metal oxide semiconductor transistor for RRAM cell (2018-10-30),
12. 10096653 - Monolithically integrated resistive memory using integrated-circuit foundry compatible processes (2018-10-09),
13. 10062845 - Flatness of memory cell surfaces (2018-08-28),
14. 9741765 - Monolithically integrated resistive memory using integrated-circuit foundry compatible processes (2017-08-22),
15. 9601690 - Sub-oxide interface layer for two-terminal memory (2017-03-21),

Title: The Innovative Mind of Natividad Vasquez

Introduction: Natividad Vasquez, a pioneering inventor based in San Francisco, CA, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Natividad Vasquez holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights: With over two decades of experience in the tech industry, Vasquez has led numerous successful projects that have revolutionized the way we interact with technology on a daily basis. His commitment to pushing the boundaries of innovation has earned him recognition as a visionary in his field.

Collaborations: Throughout his career, Vasquez has collaborated with leading tech companies, research institutions, and universities to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many of his projects.

Conclusion: Natividad Vasquez's relentless pursuit of innovation and his passion for creating technology that improves lives have solidified his reputation as a trailblazer in the world of inventions. His work continues to inspire the next generation of inventors to think outside the box and push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…