The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

May. 11, 2017
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Harry Yue Gee, Santa Clara, CA (US);

Zhen Gu, Cupertino, CA (US);

Natividad Vasquez, San Francisco, CA (US);

Sundar Narayanan, Cupertino, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/77 (2017.01); H01L 21/8239 (2006.01); H01L 23/00 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/148 (2013.01);
Abstract

A two-terminal memory device can be formed according to a manufacturing process that utilizes two distinct chemical-mechanical planarization (CMP) processes for each of bottom electrode/terminal (BE) and the top electrode/terminal (TE). The CMP processes can reduce planar height variations for a top surface of the BE and a top surface of the TE. The CMP processes can reduce height differences between the top surface of the BE and adjacent dielectric surfaces and reduce height differences between the top surface of the TE and adjacent dielectric surfaces.


Find Patent Forward Citations

Loading…