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Sundar Narayanan

This inventor holds 37 USPTO granted patents and 8 published patent applications, primarily in Resistive Memory Technology. Top assignees: Crossbar, Inc., Cypress Semiconductor Corporation, Applied Materials, Inc.. Active years: 2003-2026.

USPTO Granted Patents = 37 (Patent Applications = 8)

% Patents Active = 75.7

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 169(Granted Patents)

Location History:

Sunnyvale, CA (US) (2008 - 2013)
Santa Clara, CA (US) (2003 - 2016)
Cupertino, CA (US) (2015 - 2024)

Company Filing History:

Cypress Semiconductor Corporation

patents

1 out of 14,418

Applied Materials, Inc.

patents

Years Active: 2003-2026

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Areas of Expertise:

Resistive Switching Memory

RRAM Fabrication

Dielectric Materials

Silicon-Based Conductors

Integrated Circuits

Memory Cell Surfaces

Chemical Mechanical Planarization

Oxide-Nitride Stack

Isolation Structures

High Voltage Transistor

Filament Formation

Thickness Control

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12699824 - Determining substrate characteristics by virtual substrate measurement (2026-08-04),

2. 12672489 - Resistive switching memory having confined filament formation and methods thereof (2026-06-30),

3. 12075712 - Resistive switching memory devices and method(s) for forming the resistive switching memory devices (2024-08-27),

4. 11997932 - Resistive switching memory having confined filament formation and methods thereof (2024-05-28),

5. 11944020 - Using aluminum as etch stop layer (2024-03-26),

6. 11793093 - Resistive random access memory and fabrication techniques (2023-10-17),

7. 10873023 - Using aluminum as etch stop layer (2020-12-22),

8. 10749110 - Memory stack liner comprising dielectric block layer material (2020-08-18),

9. 10693062 - Regulating interface layer formation for two-terminal memory (2020-06-23),

10. 10522754 - Liner layer for dielectric block layer (2019-12-31),

11. 10319908 - Integrative resistive memory in backend metal layers (2019-06-11),

12. 10290801 - Scalable silicon based resistive memory device (2019-05-14),

13. 10115819 - Recessed high voltage metal oxide semiconductor transistor for RRAM cell (2018-10-30),

14. 10096653 - Monolithically integrated resistive memory using integrated-circuit foundry compatible processes (2018-10-09),

15. 10062845 - Flatness of memory cell surfaces (2018-08-28),

Title: Inventor Spotlight: Sundar Narayanan

Introduction

Sundar Narayanan, a prolific inventor based in Cupertino, CA, holds an impressive portfolio of 35 patents. His significant contributions, particularly in the field of resistive switching memory devices, showcase his expertise and innovative spirit in the technology sector.

Latest Patents

Narayanan's recent patents focus on advanced methodologies for the fabrication of resistive switching memory devices. Notable innovations include a two-step etch and a three-step etch process designed to create non-volatile resistive memory devices. Moreover, his work encompasses the development of methods for fabricating non-volatile metal nitrogen and metal oxygen resistive switching memory devices and even volatile resistive switching selector devices. His patents also elaborate on processes for forming protective spacers and confining filament formation within memory cells, enhancing the reliability and efficiency of the devices.

Career Highlights

Throughout his career, Sundar Narayanan has contributed to well-known companies such as Crossbar, Inc. and Cypress Semiconductor Corporation. His roles at these organizations have been pivotal in the advancement of memory technology, reflecting his commitment to innovation and excellence in his field.

Collaborations

Collaborating with notable colleagues such as Natividad Vasquez and Krishnaswamy Ramkumar, Narayanan has extended his impact within the technology community. These partnerships highlight the importance of collaboration in driving innovation and advancing research in resistive switching memory technologies.

Conclusion

Sundar Narayanan's dedication to innovation has positioned him as a key player in the field of memory technology. With 35 patents to his name, his contributions are instrumental in shaping the future of electronic memory solutions. As technology continues to evolve, Narayanan's work will undoubtedly remain at the forefront of innovation.

Profile summary based on public USPTO records.

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