The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Dec. 06, 2016
Applicant:
Crossbar, Inc., Santa Clara, CA (US);
Inventors:
Sundar Narayanan, Cupertino, CA (US);
Sung Hyun Jo, Sunnyvale, CA (US);
Liang Zhao, Santa Clara, CA (US);
Assignee:
Crossbar, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 27/2436 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); H01L 45/1616 (2013.01); H01L 45/1675 (2013.01);
Abstract
Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth of the interface layer can be regulated with NO plasma.