The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Mar. 31, 2021
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Sundar Narayanan, Cupertino, CA (US);

Wee Chen Gan, Cupertino, CA (US);

Natividad Vasquez, Jr., San Francisco, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/021 (2023.02); H10B 63/80 (2023.02); H10N 70/041 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract

Fabrication of resistive switching memory devices is herein provided. By way of example, a method for a two-step etch for fabricating a non-volatile resistive memory device is disclosed. In another example, a method for a three-step etch for fabricating a non-volatile resistive memory device is provided. Still other embodiments disclose a method for fabricating a non-volatile metal nitrogen/metal oxygen resistive switching memory device. Further embodiments disclose a method for fabricating a volatile resistive switching selector device. Processes for forming protective spacers in conjunction with fabricating a disclosed resistive memory device are also provided.


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